Article 3214

Title of the article



Averin Igor' Aleksandrovich, Doctor of engineering sciences, professor, head of sub-department of nanoand
microelectronics, Penza State University (40 Krasnaya street, Penza, Russia),
Pautkin Valeriy Evgen'evich, Postgraduate student, Penza State University (40 Krasnaya street, Penza, Russia),

Index UDK



Background. The aim of the work is to analyze technological features of formation of silicon accelerometer crystals - elements of primary information converters based on basic MEMS -technologies. Application of the single-crystal silicon as a structural material in creation of sensors allowed to bring a new level of technical characteristics of the devices that received the common name of MEMS-sensors. One of the most common devices manufactured by MEMS-technologies is a micromechanical accelerometer of capacitive and piezoresistive type.
Materials and methods. Silicon micromechanical accelerometers are manufactured using surface or bulk micromechanics. The article shows advantages and limitations of the considered technologies as follows: surface micromachining allows to form a plurality of sensing elements to create accelerometer mass production, and
bulk micromechanics technology is less powerful, but provide formation of sensitive elements of accelerometers with high output parameters.
Result and сonclusions. Advantages of the sensing element formed by bulk micromechanics technologies consist in high metrological and operational characteristics due to the large magnitude of the inertial mass compared with the sensitive elements made by surface micromechanics technologies. A distinctive feature of the
sensing elements of piezoresistive type compared with the capacitive ones is a more complex process due to the need of development of the elastic piezo bridges on the surface. Output parameters of MEMS-devices are determined by technological features of silicon crystals MEMS-accelerometers production.

Key words

MEMS, accelerometer, surface and bulk micromechanics.

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Дата обновления: 01.09.2014 10:03